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RED INTENSITY OSCILLATIONS DURING MBE OF GAASWOOD CEC.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 108; NO 2; PP. L441-L443; BIBL. 2 REF.Article

"SURFACE EXCHANGE" DOPING OF MBE GAAS FROM S AND SE "CAPTIVE SOURCES"WOOD CEC.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 770-772; BIBL. 11 REF.Article

TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR BEAM EPITAXYWOOD CEC; JOYCE BA.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 8; PP. 4854-4861; BIBL. 32 REF.Article

CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR BEAM EPITAXIAL GALLIUM ARSENIDEBALLINGALL JM; WOOD CEC.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 947-949; BIBL. 17 REF.Article

IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FET'SWOOD CEC; DESIMONE D; JUDAPRAWIRA S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2074-2078; BIBL. 13 REF.Article

VAPOUR PRESSURE MEASUREMENTS ON SOME ORGANIC HIGH EXPLOSIVESCUNDALL RB; PALMER TF; WOOD CEC et al.1978; J. CHEM. SOC., FARADAY TRANS., 1; GBR; DA. 1978; NO 6; PP. 1339-1345; BIBL. 19 REF.Article

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MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUBMICRON N⁺-N^--N⁺ DIODEHOLLIS MA; EASTMAN LF; WOOD CEC et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 570-572; BIBL. 7 REF.Article

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MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR BEAM EPITAXIAL GALLIUM ARSENIDEDESIMONE D; WOOD CEC; EVANS CA JR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 4938-4942; BIBL. 19 REF.Article

SCHOTTKY BARRIER HEIGHTS OF MOLECULAR BEAM EPITAXIAL METAL-ALGAAS STRUCTURESOKAMOTO K; WOOD CEC; EASTMAN LF et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 636-638; BIBL. 11 REF.Article

CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR BEAM EPITAXYKAWAI NJ; WOOD CEC; EASTMAN LF et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6208-6213; BIBL. 14 REF.Article

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GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXYNOREIKA AJ; FRANCOMBE MH; WOOD CEC et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7416-7420; BIBL. 13 REF.Article

RESISTIVITY INCREASE IN MBE GA_0.47IN_0.53AS FOLLOWING ION BOMBARDMENTBARNARD J; WOOD CEC; EASTMAN LF et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 8; PP. 193-195; BIBL. 8 REF.Article

ION BEAM ANALYSIS OF MOLECULAR BEAM EPITAXY INALAS/INGAAS LAYER STRUCTURESMORGAN DV; OHNO H; WOOD CEC et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2419-2424; BIBL. 13 REF.Article

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DOUBLE HETEROSTRUCTURE GA_0.47IN_0.53AS MESFETS BY MBEOHNO H; BARNARD J; WOOD CEC et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 8; PP. 154-155; BIBL. 11 REF.Article

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OXYGEN STABILIZATION OF MOLECULAR BEAM EPITAXIAL AL-GAAS SCHOTTKY BARRIER HEIGHTSOKAMOTO K; WOOD CEC; RATHBUN L et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4521-4523; BIBL. 9 REF.Article

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DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF HEAVILY GE-DOPED GAAS ON MOLECULAR BEAM EPITAXY GROWTH PARAMETERSMETZE GM; STALL RA; WOOD CEC et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 165-167; BIBL. 8 REF.Article

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